| PART |
Description |
Maker |
| STB7NA40 4234 STB7NA40-1 STB7NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-262VAR
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics
|
| NDT014 NDT014J23Z |
N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管（漏电.7A, 漏源电压60V，导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| PHD18NQ10T PHP18NQ10T PHB18NQ10T PHB18NQ20T |
N-channel TrenchMOS(tm) transistor
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor 18 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| STM322 STM420 STM423 STM323 STM421 STM353 STM430 S |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-204AA
USB Port Lithium-Ion/Polymer Battery Charger
2A Lithium-Ion/Polymer Battery Charger
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.3A I(D) | TO-204AA
NanoPower Voltage Detectors
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-204AA
1A Linear Li-Ion Battery Charger in 2.2x2.2mm STDFN
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 11A I(D) | TO-3 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 11A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 350V五（巴西）直| 2.8AI（四）|04AA
|
Atmel, Corp.
|
| NDT451AN NDT451 NDT451ANJ23Z |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223
N-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK160 2SK1600 |
FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3A I(D),TO-220AB
|
Toshiba Semiconductor
Toshiba America Electronic Components, Inc.
|
| NDT454P NDT454 NDT454PJ23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223
P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| PSMN063-150D PSMN063-150 PSMN063_150D-03 |
From old datasheet system
N-channel TrenchMOS transistor
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| TPC8207 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO
|
Toshiba Semiconductor
|
| BUZ102SL-4 |
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 6.2 A, 55 V, 0.033 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
SIPMOS ? Power Transistor
Quad-Channel SIPMOS Power Transistor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
